EIC1314-8 Datasheet | Excelics Semiconductor

.. ISSUED 2/06/2009 13.75-14.5 GHz 8-Watt Internally Matched Power FET Features - - - - - - 13.75- 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 d Bm Output Power at 1d B pression 6.0 d B Power Gain at 1d B pression 24% Power Added Efficiency Hermetic Metal Flange Package ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE IMD3 Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400m A Gain at 1d B pression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400m A Gain Flatness f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400m A Power Added Efficiency at 1d B pression f = 13.75-14.5GHz VDS = 10 V, IDSQ ≈ 2400m A Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.0 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 14.50 GHz Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance3 2) S.C.L. = Single Carrier Level. 1,2 Caution! ESD sensitive device. MIN 38.5 5.0 39.0 6.0 UNITS d Bm d B ±0.6 24 -44 -47 2500 4000 -2.5 3.5 2800 6000 -4.0 4.0 o d B % d Bc m A m A V C/W f = 13.75-14.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A Note: 1) Tested with 15 Ohm gate resistor. 3) Overall Rth depends on case...