EIC1314-7 Datasheet | Excelics Semiconductor

.. ISSUED 11/13/2008 13.75-14.50 GHz 7-Watt Internally Matched Power FET .060 MIN. Features - - - - - - - 13.75- 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +38.5 d Bm Output Power at 1d B pression 6.0 d B Power Gain at 1d B pression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .650±.008 .512 GATE Excelics .060 MIN. DRAIN .319 YYWW SN .094 .382 .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G IMD3 PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2400m A Gain at 1d B pression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2400m A Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈2400m A Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 28.0 d Bm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 14.50 GHz Power Added Efficiency at 1d B pression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2400m A Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 38 5 38.5 6 UNITS d Bm d B ±0.6 -41 -45 25 2400 4 -2.5 2.6 3000 6.5 -4.0 3 o d B d Bc % m A A V C/W f =...