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EIC1314-7 - Internally Matched Power FET

Key Features

  • 13.75.
  • 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +38.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .650±.008 .512 GATE Excelics EIC1314-7 .060 MIN. DRAIN .319 YYWW SN .094 .382 .022 .045 .004 .070 ±.008 .129 ALL.

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Datasheet Details

Part number EIC1314-7
Manufacturer Excelics Semiconductor
File Size 278.54 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC1314-7 Datasheet

Other Datasheets by Excelics Semiconductor

Part Number Description
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EIC1010-25 9.50-10.50 GHz 25-Watt Internally Matched Power FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EIC1314-7 ISSUED 11/13/2008 13.75-14.50 GHz 7-Watt Internally Matched Power FET .060 MIN. FEATURES • • • • • • • 13.75– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +38.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .650±.008 .512 GATE Excelics EIC1314-7 .060 MIN. DRAIN .319 YYWW SN .094 .382 .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G IMD3 PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2400mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2400mA Gain Flatness f = 13.