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EIC1314-4 - Internally Matched Power FET

Key Features

  • 13.75.
  • 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -45 dBc IM3 at Po = 25.0 dBm SCL 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EIC1314-4
Manufacturer Excelics Semiconductor
File Size 207.90 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC1314-4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EIC1314-4 UPDATED 08/21/2007 13.75-14.50GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 13.75 –14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -45 dBc IM3 at Po = 25.0 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 13.75-14.