EIC1314-4 - Internally Matched Power FET

Features

13.75.
14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -45 dBc IM3 at Po = 25.0 dBm SCL 100% Tested for DC, RF, and RTH.

Excelics Semiconductor

Datasheet Details

Part number	EIC1314-4
Manufacturer	Excelics Semiconductor
File Size	207.90 KB
Description	Internally Matched Power FET
Datasheet	EIC1314-4 Datasheet
Additional preview pages of the EIC1314-4 datasheet.

📁 Similar Datasheet

Other Datasheets by Excelics Semiconductor

EIC1314-12 - Internally Matched Power FET
EIC1314-2 - Internally Matched Power FET
EIC1314-7 - Internally Matched Power FET
EIC1314-8 - 12.75-13.25 GHz 12-Watt Internally Matched Power FET
EIC1010-25 - 9.50-10.50 GHz 25-Watt Internally Matched Power FET
EIC1010-4 - Internally Matched Power FET
EIC1010-8 - Internally Matched Power FET
EIC1010A-12 - Internally Matched Power FET

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com EIC1314-4 UPDATED 08/21/2007 13.75-14.50GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 13.75 –14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -45 dBc IM3 at Po = 25.0 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 13.75-14.

Published: Aug 4, 2009 |