EIC2224-15 Datasheet | Excelics Semiconductor

.. ISSUED 04/04/2006 - 2.40 GHz 15W Internally Matched Power FET 2X 0.079 MIN 4X 0.102 Features - - - - - - - 2.20- 2.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 d Bm Output Power at 1d B pression 13.0 d B Power Gain at 1d B pression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics 0.024 0.580 YYWW 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25OC) SYMBOLS P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression VDS = 10V, IDSQ ≈ 4.6A Gain at 1d B pression VDS = 10V, IDSQ ≈ 4.6A f = 2.20-2.40GHz f = 2.20-2.40GHz Caution! ESD sensitive device. 41.5 12.0 42.5 13.0 UNIT d Bm d B Gain Flatness f = 2.20-2.40GHz VDS = 10V, IDSQ ≈ 4.6A Power Added Efficiency at 1d B pression VDS = 10V, IDSQ ≈ 4.6A f = 2.20-2.40GHz Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 2.20-2.40GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 86m A ±0.6 35 4.8 8.6 -2.5 1.7 5.4 10.8 -4.0 1.9 o d B % A A V C/W Note: 1. Tested with 25 Ohm gate resistor. 2. Overall Rth depends on case...