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EIC2832-2 - Internally Matched Power FET

Features

  • 2.80.
  • 3.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 22.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

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Datasheet Details

Part number EIC2832-2
Manufacturer Excelics Semiconductor
File Size 110.46 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC2832-2 Datasheet
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www.DataSheet4U.com EIC2832-2 UPDATED 02/14/2006 2.80-3.20 GHz 2-Watt Internally Matched Power FET Excelics EIC2832-2 .827±.010 .669 .120 MIN FEATURES • • • • • • • • 2.80– 3.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 22.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Output Power at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 2.80-3.
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