EIC2832-2 Datasheet | Excelics Semiconductor

.. UPDATED 02/14/2006 2.80-3.20 GHz 2-Watt Internally Matched Power FET Excelics .827±.010 .669 .120 MIN Features - - - - - - - - 2.80- 3.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 d Bm Output Power at 1d B pression 12.0 d B Power Gain at 1d B pression 35% Power Added Efficiency -46 d Bc IM3 at PO = 22.5 d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH Output Power at 1d B pression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550m A Gain at 1d B pression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550m A Gain Flatness f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550m A Power Added Efficiency at 1d B pression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550m A Drain Current at 1d B pression f = 2.80-3.20GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 22.5 d Bm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 3.20GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 32.5 11.0 33.5 12.0 UNITS d Bm d B ±0.6 35 600 -43 -46 1000 -2.5 11 1250 -4.0 12 o d B % 700 m A d Bc m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 10 m A 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case...