EIC3135-8 Datasheet | Excelics Semiconductor

.. UPDATED 01/10/2005 3.10-3.50 GHz 8W Internally Matched Power FET GATE 0.120 MIN 0.054 0.078 S/N Features - - - - - - - 3.10-3.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 d Bm Output Power at 1d B pression 13.0 d B Power Gain at 1d B pression 37% Power Added Efficiency -46 d Bc IM3 at Po = 28.5 d Bm SCL Hermetic Metal Flange Package 0.508 0.125 0.669 0.827 Excelics 0.120 MIN 0.024 0.105 0.004 DRAIN ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 3.10-3.50GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f = 3.10-3.50GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f = 3.10-3.50GHz VDS = 10 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression f = 3.10-3.50GHz VDS = 10 V, IDSQ ≈ 2200m A Drain Current at 1d B pression f = 3.10-3.50GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 3.50GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 38.5 12.0 TYP 39.5 13.0 ±0.6 37 2300 -43 -46 4000 -2.5 3.5 5000 -4.0 4.0 o UNITS d Bm d B d B % 2800 m A d Bc m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A Note: 1) Tested with 100 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case...