EIC3135-8 - Internally Matched Power FET

Features

3.10-3.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 13.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 0.508 0.125 EIC3135-8 0.669 0.827 Excelics 0.120 MIN 0.024 0.105 0.004 DRAIN ALL.

Excelics Semiconductor

Datasheet Details

Part number	EIC3135-8
Manufacturer	Excelics Semiconductor
File Size	109.30 KB
Description	Internally Matched Power FET
Datasheet	EIC3135-8 Datasheet
Additional preview pages of the EIC3135-8 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com EIC3135-8 UPDATED 01/10/2005 3.10-3.50 GHz 8W Internally Matched Power FET GATE 0.120 MIN 0.054 0.078 S/N YM FEATURES • • • • • • • 3.10-3.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 13.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 0.508 0.125 EIC3135-8 0.669 0.827 Excelics 0.120 MIN 0.024 0.105 0.004 DRAIN ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 3.10-3.50GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 3.10-3.50GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 3.10-3.

Published: Aug 4, 2009 |