EIC3439-4 Datasheet | Excelics Semiconductor

.. ISSUED DATED: 11/12/2007 3.40-3.90GHz 4-Watt Internally Matched Power FET Features - - - - - - - 3.40- 3.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 d Bm Output Power at 1d B pression 12.0 d B Power Gain at 1d B pression 35% Power Added Efficiency -46 d Bc IM3 at PO = 25.5 d Bm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100m A Gain at 1d B pression f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100m A Gain Flatness f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100m A Power Added Efficiency at 1d B pression f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100m A Drain Current at 1d B pression f = 3.40-3.90GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.5 d Bm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 3.90GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 35.5 11.0 36.5 12.0 UNITS d Bm d B ±0.6 35 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o d B % 1500 m A d Bc m A V C/W VDS = 3 V, IDS = 20 m A Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case...