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EIC3439-4
ISSUED DATED: 11/12/2007
3.40-3.90GHz 4-Watt Internally Matched Power FET
FEATURES
• • • • • • • 3.40–3.90GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 3.40-3.90GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 3.40-3.
EIC3439-4 Datasheet
