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EMB04N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMB04N03A
Manufacturer Excelliance MOS
File Size 229.71 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB04N03A Datasheet

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Other Datasheets by Excelliance MOS
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 90A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB04N03A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 90 55 180 53 140 40 69 27 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.
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