Datasheet Details
| Part number | EMB04N03HR |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 325.46 KB |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download | EMB04N03HR Download (PDF) |
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| Part number | EMB04N03HR |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 325.46 KB |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download | EMB04N03HR Download (PDF) |
|
|
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: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 4.0mΩ 5.0mΩ ID @TC=25℃ ID @TA=25℃ 138A 19A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C L = 0.1mH L = 0.05mH Power Dissipation1 Power Dissipation1 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD PD Tj, Tstg ±20 138 87 19 15 200 53 140 70 125 50 2.4 1.5 -55 to 150 ◆100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL= 32A,RG=25Ω,Rated VDS=30V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 1.0 Junction-to-Ambient3 t≦10s Steady-State RθJA RθJA 19 52 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
EMB04N03HR Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part Number | Description |
|---|---|
| EMB04N03H | MOSFET |
| EMB04N03HS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| EMB04K03HPF | MOSFET |
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