EMB04N03HR
Description
:
N-CH
BVDSS
30V
RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V
4.0mΩ 5.0mΩ
ID @TC=25℃ ID @TA=25℃
138A 19A
Single N Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant
- ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
L = 0.1m H L = 0.05m H
Power Dissipation1 Power Dissipation1
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
IDM IAS EAS EAR PD
PD Tj, Tstg
±20 138 87 19 15 200 53 140 70 125 50 2.4 1.5 -55 to 150
- 100% UIS testing in condition of VD=25V, L=0.1m H, VG=10V, IL= 32A,RG=25Ω,Rated VDS=30V N-CH
- THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RθJC
Junction-to-Ambient3 t≦10s...
