• Part: EMB04N03H
  • Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 344.19 KB
Download EMB04N03H Datasheet PDF
Excelliance MOS
EMB04N03H
Singel N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 4.0mΩ 75A N Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate-Source Voltage ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1m H L = 0.05m H 140 m J Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 W -55 to...