EMB04N03G
Description
:
N-CH
BVDSS
30 V
RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V
4.5 mΩ 6.0 mΩ
ID @TA=25℃
23 A
Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free
- ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
±20
Continuous Drain Current1
Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4
TA = 25 °C TA = 70 °C
L = 0.1m H
23 14
Repetitive Avalanche Energy2,4
L = 0.05m H
Power Dissipation1
TA = 25 °C TA = 70 °C
3.1 1.3
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
- 100% UIS testing in condition of VD=30V, L=0.1m H, VG=10V, IL=30A, Rated VDS=30V N-CH
UNIT V m J W °C
- THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case...
