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EMB04N03G - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 4.5 mΩ 6.0 mΩ ID @TA=25℃ 23 A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Sourc

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Datasheet Details

Part number EMB04N03G
Manufacturer Excelliance MOS
File Size 457.76 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB04N03G Datasheet

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Full PDF Text Transcription

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EMB04N03G Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 4.5 mΩ 6.0 mΩ ID @TA=25℃ 23 A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 TA = 25 °C TA = 70 °C L = 0.1mH ID 23 14 IDM 92 IAS 50 EAS 125 Repetitive Avalanche Energy2,4 L = 0.05mH EAR 62.5 Power Dissipation1 TA = 25 °C TA = 70 °C PD 3.1 1.
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