Datasheet Details
| Part number | EMB04N03G |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 457.76 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download | EMB04N03G Download (PDF) |
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| Part number | EMB04N03G |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 457.76 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download | EMB04N03G Download (PDF) |
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: N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 4.5 mΩ 6.0 mΩ ID @TA=25℃ 23 A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 TA = 25 °C TA = 70 °C L = 0.1mH ID 23 14 IDM 92 IAS 50 EAS 125 Repetitive Avalanche Energy2,4 L = 0.05mH EAR 62.5 Power Dissipation1 TA = 25 °C TA = 70 °C PD 3.1 1.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ▪100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=30A, Rated VDS=30V N-CH UNIT V mJ W °C ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 375°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test TYPICAL MAXIMUM 25 40 75 UNIT °C/W 2019/11/26 P.1 A.1 EMB04N03G ▪CH-1_ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 30 VDS = VGS, ID = 250uA 1.2 VDS = 0V, VGS = ±20V VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V 23 VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VDS = 5V, ID = 20A DYNAMIC Input Capacitance5 Output Capacitance5 Reverse Transfer Capacitance5 Gate Resistance4,5 Total Gate Charge1,2,5 Gate-Source Charge1,2,5 Gate-Drain Charge1,2,5 Tur
EMB04N03G Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part Number | Description |
|---|---|
| EMB04N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03H | MOSFET |
| EMB04N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03HS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03V | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N06H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04K03HPF | MOSFET |
| EMB02K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02N03HR | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |