Datasheet4U Logo Datasheet4U.com

EMB04N03HS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet preview – EMB04N03HS

Datasheet Details

Part number EMB04N03HS
Manufacturer Excelliance MOS
File Size 268.23 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB04N03HS Datasheet
Additional preview pages of the EMB04N03HS datasheet.

📁 Similar Datasheet

  • EMB09P03A - P-Channel 30V MOSFET (VBsemi)
  • EMB10 - PNP Digital Transistors (Rohm)
  • EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
  • EMB11 - Dual Digital Transistors (Rohm)
  • EMB11 - Dual Digital Transistors (JCET)
  • EMB1412 - EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)
  • EMB1428Q - EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)
  • EMB1432Q - EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)
  • EMB1433Q - EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)
  • EMB1499Q - EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) (ETCTI)
Other Datasheets by Excelliance MOS
  • EMB04N03H - MOSFET
  • EMB04N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB04N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB04N03G - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB04N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB04N06H - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB04K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB04K03HPF - MOSFET

Full PDF Text Transcription

Click to expand full text
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB04N03HS LIMITS UNIT Gate‐Source Voltage Continuous Drain Current1 TC = 25 °C TA= 25 °C(t≦10s) Pulsed Drain Current2 TA= 25 °C(Steady‐State) TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy3 L = 0.1mH, IAS=47A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 V 84 30 A 19 53 320 47 110 mJ 55 50 W 20 ‐55 to 150 °C 100% UIS testing in condition of VD=15V, L=0.
Published: |