EMB04N06H Description
EMB04N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 3Pulsed drain current rating is package limited. Pulse Width 300 sec, Duty Cycle 2%.
EMB04N06H is N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
| Part Number | Description |
|---|---|
| EMB04N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03G | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03HS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
EMB04N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 3Pulsed drain current rating is package limited. Pulse Width 300 sec, Duty Cycle 2%.