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EMB04N06H - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMB04N06H
Manufacturer Excelliance MOS
File Size 340.15 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB04N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C 84 ID TC = 100 °C 50 IDM 200 Avalanche Current IAS 65 Avalanche Energy L = 0.1mH, ID=65A, RG=25Ω EAS 211 Repetitive Avalanche Energy2 L = 0.05mH EAR 105 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 -55 to 150 100% UIS testing in condition of VD=30V, L=0.
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