EMB04N06H Overview
EMB04N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 3Pulsed drain current rating is package limited. Pulse Width 300 sec, Duty Cycle 2%.
| Part number | EMB04N06H |
|---|---|
| Datasheet | EMB04N06H-ExcellianceMOS.pdf |
| File Size | 340.15 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
|
|
EMB04N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 3Pulsed drain current rating is package limited. Pulse Width 300 sec, Duty Cycle 2%.
See all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB04N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03G | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03HS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04N03V | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB04K03HPF | MOSFET |
| EMB02K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02N03HR | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |