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EMB07N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMB07N03A
Manufacturer Excelliance MOS
File Size 223.54 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB07N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 7mΩ ID 70A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 70 ID TC = 100 °C 43 IDM 160 Avalanche Current IAS 35 Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=35A, RG=25Ω EAS L = 0.05mH EAR 61.25 30.6 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 62.5 25 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.
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