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EMB07N03VQ - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.8 mΩ 10.5 mΩ ID @TC=25℃ 73 A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Sour

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Datasheet Details

Part number EMB07N03VQ
Manufacturer Excelliance MOS
File Size 442.47 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription

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EMB07N03VQ Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.8 mΩ 10.5 mΩ ID @TC=25℃ 73 A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C ID 73 49 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID 12 10 IDM 131 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH IAS 35 EAS 61 EAR 31 Power Dissipation TC = 25 °C TC = 100 °C PD 83.3 33.
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