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EMB07N03HQ - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMB07N03HQ
Manufacturer Excelliance MOS
File Size 318.12 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB07N03HQ Datasheet

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V 7.8mΩ ID@TC=25°C 50A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB07N03HQ LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C TC = 100 °C TA = 25 °C 50 ID 40 A 14 Pulsed Drain Current1 TA = 70 °C 11 IDM 100 Avalanche Current IAS 35 Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.
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