Datasheet Details
| Part number | EMB07N03V |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 364.35 KB |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download |
EMB07N03V Download (PDF)
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| Part number | EMB07N03V |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 364.35 KB |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download |
EMB07N03V Download (PDF)
|
|
|
|
: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ ID @TA=25℃ 7.0mΩ 9.0mΩ 59A 13A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 TC = 25 °C 59 Continuous Drain Current1 TC = 100 °C TA = 25 °C ID 39 13 TA = 70 °C 10 Pulsed Drain Current1 IDM 107 Avalanche Current1,4 IAS 33 Avalanche Energy1,4 L = 0.1mH EAS 54 Repetitive Avalanche Energy2,4 L = 0.05mH EAR 27 Power Dissipation1 TC = 25 °C TC = 100 °C PD 46.3 18.5 Power Dissipation1 TA = 25 °C TA = 70 °C PD 2.2 1.4 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ▪100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=20A, RG=25Ω,Rated VDS=30V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 2.7 Junction-to-Ambient3 t≦10s Steady-State RθJA RθJA 25 58 1Pulse width limited by maximum junction temperature.
2Duty cycle ≦ 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
EMB07N03V Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part Number | Description |
|---|---|
| EMB07N03VQ | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N03HQ | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N03HS | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N04A | MOSFET |
| EMB07N04H | MOSFET |
| EMB07B03H | Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07P03A | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07P03CS | P-Channel Logic Level Enhancement Mode Field Effect Transistor |