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EMB07N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ ID @TA=25℃ 7.0mΩ 9.0mΩ 59A 13A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS G

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Datasheet Details

Part number EMB07N03V
Manufacturer Excelliance MOS
File Size 364.35 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB07N03V Datasheet

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Full PDF Text Transcription

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EMB07N03V Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ ID @TA=25℃ 7.0mΩ 9.0mΩ 59A 13A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 TC = 25 °C 59 Continuous Drain Current1 TC = 100 °C TA = 25 °C ID 39 13 TA = 70 °C 10 Pulsed Drain Current1 IDM 107 Avalanche Current1,4 IAS 33 Avalanche Energy1,4 L = 0.1mH EAS 54 Repetitive Avalanche Energy2,4 L = 0.05mH EAR 27 Power Dissipation1 TC = 25 °C TC = 100 °C PD 46.3 18.
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