Datasheet4U Logo Datasheet4U.com

EMB07N03HS Datasheet Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer: Excelliance MOS

Datasheet Details

Part number EMB07N03HS
Manufacturer Excelliance MOS
File Size 422.61 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB07N03HS Datasheet

General Description

: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 7.0mΩ 10.6mΩ 51A ID @TA=25℃ 14A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 100 °C ID Continuous Drain Current TA = 25 °C TA = 70 °C ID Pulsed Drain Current1 IDM Avalanche Current IAS Avalanche Energy L = 0.1mH EAS Repetitive Avalanche Energy2 L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C PD Power Dissipation TA = 25 °C TA = 70 °C PD Operating Junction & Storage Temperature Range Tj, Tstg ▪100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=18A, Rated VDS=30V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RθJC Junction-to-Ambient3 RθJA 1Pulse width limited by maximum junction temperature.

2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.

Copper, in a still air environment with TA =25°C.

Overview

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.