EMB07N03HS Overview
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
| Part number | EMB07N03HS |
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| Datasheet | EMB07N03HS-ExcellianceMOS.pdf |
| File Size | 422.61 KB |
| Manufacturer | Excelliance MOS |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
See all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB07N03HQ | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N03V | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N03VQ | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N04A | MOSFET |
| EMB07N04H | MOSFET |
| EMB07B03H | Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07P03A | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07P03CS | P-Channel Logic Level Enhancement Mode Field Effect Transistor |