EMF20P02V Datasheet | Excelliance MOS

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐12V RDSON (MAX.) 20mΩ ‐18A P‐Channel MOSFET UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current TC = 25 °C ID TA = 25 °C Pulsed Drain Current1 TC = 100 °C IDM TC = 25 °C Power Dissipation TC = 100 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg LIMITS ±8 ‐18 ‐9 ‐12 ‐72 21 8.3 2.5 1.6 ‐55 to 150 UNIT V A W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 350°C / W when mounted on a 1 in2 pad of 2 oz...