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FNK10P18K - P-Channel Power MOSFET

Description

The FNK10P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Features

  • VDS =-100V,ID =-18A RDS(ON).

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Datasheet Details

Part number FNK10P18K
Manufacturer FNK
File Size 1.18 MB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK10P18K Datasheet

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Full PDF Text Transcription

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FNK P-Channel Enhancement Mode Power MOSFET Description The FNK10P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
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