FNK10P18K
FNK10P18K is P-Channel Power MOSFET manufactured by FNK.
Description
The FNK10P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
- VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
(Typ:85mΩ)
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
Application
- Power management in notebook puter
- Portable equipment and battery powered systems
Schematic diagram TO-252 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed...
