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FNK3318 - N-Channel MOSFET

Description

The FNK3318 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

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Datasheet Details

Part number FNK3318
Manufacturer FNK
File Size 1.59 MB
Description N-Channel MOSFET
Datasheet download datasheet FNK3318 Datasheet

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Full PDF Text Transcription

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30V N-Channel MOSFET General Description The FNK3318 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 80A < 6.5mΩ < 10 mΩ FNK3318 Top View 18 27 36 45 D G S V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
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