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20V N-Channel MOSFET
General Description
The FNK3328E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V while retaining a 12V VGS(MAX) rating.This device is suitable for use as load switch and general purpose FET application.
Product Summary
VDS (V) = 20V ID = 10A (VGS = 4.5V) RDS(ON) < 9mΩ (VGS = 4.5V) RDS(ON) < 12mΩ (VGS = 2.5V)
FNK3328E
D G
S
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Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 20 ±12 10 9.2 40 3.
FNK3328E Datasheet
