FCB36N60N Description
The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter...
FCB36N60N Key Features
- RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A
- Ultra low gate charge (Typ. Qg = 86 nC)
- Low effective output capacitance (Typ. Coss.eff = 361 pF)
- 100% avalanche tested
- RoHS pliant