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FDB2614 - N-Channel MOSFET

General Description

This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification Battery Protection Circuit

Key Features

  • RDS(on) = 22.9 mΩ ( Typ. )@ VGS = 10 V, ID = 31 A.
  • High Performance Trench technology for Extremely Low RDS(on).
  • Low Gate Charge.
  • High Power and Current Handing Capability General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB2614 — N-Channel PowerTrench® MOSFET November 2013 FDB2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ Features • RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A • High Performance Trench technology for Extremely Low RDS(on) • Low Gate Charge • High Power and Current Handing Capability General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.