FDB2614 Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. , Junction to Ambient (minimum pad of 2 oz copper), Max. , Junction to Ambient (1 in2 pad of 2 oz copper), Max.
FDB2614 Key Features
- RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A
- High Performance Trench technology for Extremely Low
- Low Gate Charge
- High Power and Current Handing Capability