Datasheet Details
| Part number | FDC365P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 234.97 KB |
| Description | P-Channel PowerTrench MOSFET |
| Datasheet | FDC365P-FairchildSemiconductor.pdf |
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Overview: FDC365P P-Channel PowerTrench® MOSFET FDC365P P-Channel PowerTrench® MOSFET -35V, -4.
| Part number | FDC365P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 234.97 KB |
| Description | P-Channel PowerTrench MOSFET |
| Datasheet | FDC365P-FairchildSemiconductor.pdf |
|
|
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This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
Applications Inverter Power Supplies S D D Pin 1 D D SuperSOTTM -6 G D1 D2 G3 6D 5D 4S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings -35 ±20 -4.3 -20 1.6 0.8 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) 78 156 °C/W Device Marking .365P Device FDC365P Package SSOT6 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 1 www.fairchildsemi.com FDC365P P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C VDS = -28V, VGS = 0V VGS = ±20V, VDS = 0V -35 V -26 mV/°C -1 ±100 µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, I
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