FDC365P Datasheet | Fairchild Semiconductor

FDC365P P-Channel PowerTrench® MOSFET P-Channel PowerTrench® MOSFET -35V, -4.3A, 55mΩ Features - Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A - Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A - RoHS pliant November 2007 tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Applications - Inverter - Power Supplies Pin 1 SuperSOTTM -6 D1 D2 G3 6D 5D 4S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage...