Datasheet4U Logo Datasheet4U.com

FDC365P - P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

Inverter Power Supplies S D D Pin 1 D D Su

Key Features

  • Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A.
  • Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A.
  • RoHS Compliant November 2007 tm General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDC3601N Dual N-Channel MOSFET ON Semiconductor
FDC3612 N-Channel MOSFET ON Semiconductor
FDC3612 N-Channel MOSFET Kexin
FDC3612A N-Channel MOSFET Kexin
FDC3400 Floppy Disk Hard Sector Data Handler SMSC

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDC3601N N-Channel MOSFET
FDC3612 N-Channel MOSFET
FDC3616N N-Channel MOSFET
FDC3512 N-Channel MOSFET
FDC3535 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDC365P P-Channel PowerTrench® MOSFET FDC365P P-Channel PowerTrench® MOSFET -35V, -4.3A, 55mΩ Features „ Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A „ Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A „ RoHS Compliant November 2007 tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.