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FDC796N - 30V N-Channel PowerTrench MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

DC/DC converter

Features

  • 12.5 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V.
  • High performance trench technology for extremely low RDS(ON).
  • Low gate charge.
  • High power and current handling capability.
  • Fast switching speed. G S S SuperSOT-6TM FLMP S S S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed Maximum Pow.

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Full PDF Text Transcription

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FDC796N February 2004 FDC796N 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter • Power management • Load switch Features • 12.5 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • Low gate charge • High power and current handling capability • Fast switching speed.
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