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FDD6670AL - 30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Key Features

  • 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.5 V.
  • Low gate charge.
  • Fast switching.
  • High performance trench technology for extremely low RDS(ON).

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Full PDF Text Transcription for FDD6670AL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDD6670AL. For precise diagrams, and layout, please refer to the original PDF.

FDD6670AL May 2004 FDD6670AL 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency ...

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SFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.

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