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FDD6670S - 30V N-Channel MOSFET

General Description

The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Key Features

  • 64 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky body diode.
  • Low gate charge (17nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Full PDF Text Transcription for FDD6670S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDD6670S. For precise diagrams, and layout, please refer to the original PDF.

FDD6670S September 2001 FDD6670S 30V N-Channel PowerTrench® SyncFET ™ General Description The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchr...

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0S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode. Features • 64 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.

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