FDD6672A
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- 65 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 10 V
- High performance trench technology for extremely low RDS(ON)
- Low gate charge (33 nC typical)
- High power and current handling capability
