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FDD6672A - null30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Key Features

  • 65 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 10 V.
  • High performance trench technology for extremely low RDS(ON).
  • Low gate charge (33 nC typical).
  • High power and current handling capability.

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Full PDF Text Transcription for FDD6672A (Reference)

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FDD6672A May 2000 PRELIMINARY FDD6672A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall e...

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Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 65 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.

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