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FDD6676 - 30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

extremely low RDS(ON) in a small package.

Key Features

  • 78 A, 30 V RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 8.5 mΩ @ VGS = 4.5 V.
  • Low gate charge.
  • Fast Switching.
  • High performance trench technology for extremely low RDS(ON).

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Full PDF Text Transcription for FDD6676 (Reference)

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FDD6676 April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of...

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ET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package. Features • 78 A, 30 V RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 8.5 mΩ @ VGS = 4.