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FDD6670A - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

Features

  • 66 A, 30 V RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 10 mΩ @ VGS = 4.5 V.
  • Low gate charge.
  • Fast Switching.
  • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C Pulsed (Note 1a) (Note 1a) Power Dissipation @TC=25°C @TA.

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Datasheet Details

Part number FDD6670A
Manufacturer Fairchild Semiconductor
File Size 258.03 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD6670A Datasheet
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Full PDF Text Transcription

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FDD6670A March 2015 FDD6670A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Applications • DC/DC converter • Motor Drives Features • 66 A, 30 V RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 10 mΩ @ VGS = 4.
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