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FDFME2P823ZT - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Description

Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A Low profile: 0.55 mm maximum in the new package M

Features

  • General.

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Datasheet Details

Part number FDFME2P823ZT
Manufacturer Fairchild Semiconductor
File Size 254.85 KB
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
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FDFME2P823ZT Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFME2P823ZT July 2010 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -2.6 A, 142 mΩ Features General Description „ Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A „ Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A „ Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A „ Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Schottky: VF < 0.57 V @ 1A „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 1600 V (Note 3) „ RoHS Compliant This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrions.
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