Datasheet Details
| Part number | FDFME2P823ZT |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 254.85 KB |
| Description | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| Datasheet |
 FDFME2P823ZT Datasheet
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| Part number | FDFME2P823ZT |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 254.85 KB |
| Description | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| Datasheet |
FDFME2P823ZT Datasheet
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Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Schottky: VF < 0.57 V @ 1A Free from halogenated compounds and antimony oxides HBM ESD protection level > 1600 V (Note 3) RoHS Compliant T
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