FDFM2P110 Datasheet | Fairchild Semiconductor

FDFM2P110 Integrated P-Channel Power Trench® MOSFET and Schottky Diode August 2005 Integrated P-Channel Power Trench® MOSFET and Schottky Diode General Description FDFM2P110 bines the exceptional performance of Fairchild's Power Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Micro FET package. Applications - Buck Boost Features This device is designed specifically as a single package solution for Buck Boost. It Features a fast switching, low gate charge MOSFET with very low on-state resistance. - -3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V RDS(ON) = 200mΩ @ VGS = -2.5 V - Low Profile - 0.8 mm maximun - in the new package Micro FET 3x3 mm PIN 1 A SG A1 6A C/D S2 5S G3 4D MLP 3x3 AS D...