FDFM2N111 Datasheet | Fairchild Semiconductor

FDFM2N111 Integrated N-Channel Power Trench® MOSFET and Schottky Diode August 2005 Integrated N-Channel Power Trench® MOSFET and Schottky Diode General Description FDFM2N111 bines the exceptional performance of Fairchild's Power Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Micro FET package. Applications - Standard Buck Converter Features This device is designed specifically as a single package solution for Standard Buck Converter. It Features a fast switching, low gate charge MOSFET with very low on-state resistance. - 4 A, 20 V RDS(ON) = 100mΩ @ VGS = 4.5 V RDS(ON) = 150mΩ @ VGS = 2.5 V - Low Profile - 0.8 mm maximun - in the new package Micro FET 3x3 mm PIN 1 A S/C G A1 S/C 2 6A 5 S/C G3 4D A S/C D MLP...