FDG6313N Datasheet | Fairchild Semiconductor

.. April 2002 FDG6313N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features 25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) =0.60 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source...