FDG6318P Datasheet | Fairchild Semiconductor

January 2003 Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Features - - 0.5 A, - 20 V. RDS(ON) = 780 mΩ @ VGS = - 4.5 V RDS(ON) = 1200 mΩ @ VGS = - 2.5 V - Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). - pact industry standard SC70-6 surface mount package Applications - Battery...