FDG6318P Datasheet Dual P-channel/ Digital Fet

Manufacturer: Fairchild (now onsemi)

Overview: FDG6318P January 2003 FDG6318P Dual P-Channel, Digital FET General.

Datasheet Details

Part number	FDG6318P
Manufacturer	Fairchild (now onsemi)
File Size	123.67 KB
Description	Dual P-Channel/ Digital FET
Datasheet	FDG6318P_FairchildSemiconductor.pdf

General Description

These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.

Key Features

0.5 A,.
20 V. RDS(ON) = 780 mΩ @ VGS =.
4.5 V RDS(ON) = 1200 mΩ @ VGS =.
2.5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
Compact industry standard SC70-6 surface mount package.

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