FDMC8296 Description
at VGS = 10V, ID = 12A Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A High performance trench technology for extremely low rDS(on) Termination is Lead-free and RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching...
FDMC8296 Key Features
- Max rDS(on) = 8.0m: at VGS = 10V, ID = 12A
- Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A
- High performance trench technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant