Datasheet Details
| Part number | FDMC8296 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 394.56 KB |
| Description | N-Channel MOSFET |
| Download | FDMC8296 Download (PDF) |
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| Part number | FDMC8296 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 394.56 KB |
| Description | N-Channel MOSFET |
| Download | FDMC8296 Download (PDF) |
|
|
|
Max rDS(on) = 8.0m: at VGS = 10V, ID = 12A Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A High performance trench technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application DC - DC Buck Converter Notebook battery power management Load switch in Notebook Top Bottom S SG S MLP 3.3x3.3 DD D D D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous TC = 25°C TA = 25°C -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C Operating and Storage Junction Temperature Range (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 18 12 52 72 27 2.3 -55 to +150 Units V V A mJ W °C Thermal Characteristics RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDMC8296 Device FDMC8296 Package MLP 3.3X3.3 4.6 (Note 1a) 53 °C/W Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation 1 FDMC8296 Rev.C3 www.fairchildsemi.com FDMC8296 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leak
FDMC8296 N-Channel Power Trench® MOSFET FDMC8296 N-Channel Power Trench® MOSFET 30V, 18A, 8.
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