FDMC8296 Datasheet | Fairchild Semiconductor

FDMC8296 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 30V, 18A, 8.0m: June 2014 Features General Description - Max rDS(on) = 8.0m: at VGS = 10V, ID = 12A - Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A - High performance trench technology for extremely low rDS(on) - Termination is Lead-free and RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Application - DC - DC Buck Converter - Notebook...