Click to expand full text
FDMC8296 N-Channel Power Trench® MOSFET
FDMC8296
N-Channel Power Trench® MOSFET
30V, 18A, 8.0m:
June 2014
Features
General Description
Max rDS(on) = 8.0m: at VGS = 10V, ID = 12A Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A High performance trench technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application
DC - DC Buck Converter
Notebook battery power management
Load switch in Notebook
Top
Bottom
S SG S MLP 3.3x3.
FDMC8296 Datasheet
