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FDMS8090 - MOSFET

General Description

This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package.

The package is enhanced for exceptional thermal performance.

Bridge Topologies Synchronous Rectifier Pair Motor Drives Top Pin 1 B

Key Features

  • Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 10 A.
  • Max rDS(on) = 20 mΩ at VGS = 6 V, ID = 8 A.
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
  • 100% UIL tested.
  • RoHS Compliant General.

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Other Datasheets by Fairchild (now onsemi)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS8090 PowerTrench® Symmetrical Dual April 2013 FDMS8090 PowerTrench® Symmetrical Dual 100 V N-Channel MOSFET Features „ Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 10 A „ Max rDS(on) = 20 mΩ at VGS = 6 V, ID = 8 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ 100% UIL tested „ RoHS Compliant General Description This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.