FDMT80080DC Datasheet | Fairchild Semiconductor

FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET July 2015 N-Channel Dual CoolTM 88 PowerTrench® MOSFET 80 V, 254 A, 1.35 mΩ Features - Max rDS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A - Max rDS(on) = 1.82 mΩ at VGS = 8 V, ID = 31 A - Advanced Package and Silicon bination for low rDS(on) and high efficiency - Next generation enhanced body diode technology, engineered for soft recovery - Low profile 8x8mm MLP package General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining...