Datasheet4U Logo Datasheet4U.com

FDPF26N40 - N-Channel MOSFET

Download the FDPF26N40 datasheet PDF. This datasheet also covers the FDP26N40 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 0.13Ω ( Typ. )@ VGS = 10V, ID = 13A.
  • Low gate charge ( Typ. 48nC).
  • Low Crss ( Typ. 30pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant UniFETTM tm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP26N40_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDPF20N50 N-Channel MOSFET ON Semiconductor
FDPF20N50FT N-Channel MOSFET ON Semiconductor
FDPF20N50T N-Channel MOSFET ON Semiconductor
FDPF2710T N-Channel MOSFET ON Semiconductor
FDPF2D3N10C N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDPF20N50 N-Channel MOSFET
FDPF20N50FT N-Channel MOSFET
FDPF20N50T N-Channel MOSFET
FDPF24N40 N-Channel MOSFET
FDPF2710T MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP26N40 / FDPF26N40 N-Channel MOSFET www.DataSheet4U.com February 2008 FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.16Ω Features • RDS(on) = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A • Low gate charge ( Typ. 48nC) • Low Crss ( Typ. 30pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode.