FDPF26N40 Datasheet | Fairchild Semiconductor

atures - RDS(on) = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A - Low gate charge ( Typ. 48n C) - Low Crss ( Typ. 30p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant Uni FETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. G G DS TO-220 FDP Series GD S TO-220F FDPF Series MOSFET Maximum Ratings TC = 25o C unless otherwise noted- Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate above 25o C -Continuous (TC = 25o C) -Continuous (TC = 100o C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 265 2.0 -55 to +150 300 26 15.6 104 1352 26 26.5 4.5 40 0.3 FDP26N40 FDPF26N40 400 ±30 26- 15.6- 104- Units V V A A m J A m J V/ns W W/o C o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP26N40 0.5 0.5 62.5 FDPF26N40 3.0 62.5 o Units C/W ©2008 Fairchild Semiconductor Corporation FDP26N40 / FDPF26N40 Rev. A .fairchildsemi. FDP26N40 / FDPF26N40 N-Channel MOSFET Package Marking and Ordering Information TC = 25o C unless otherwise noted .. Device Marking FDP26N40 FDPF26N40 Device FDP26N40 FDPF26N40...