FDR836P - P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDR836P
Manufacturer	Fairchild Semiconductor
File Size	224.87 KB
Description	P-Channel MOSFET
Datasheet	FDR836P Datasheet
Additional preview pages of the FDR836P datasheet.

Product details

Description

SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

Features

-6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V RDS(ON) = 0.040 W @ VGS = -2.5 V.
High density cell design for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. D S D S 5 6 G 4 3 2 1 7 8 SuperSOT -8 TM D D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless other.

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Published: Mar 30, 2005 |