Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- -8 A, -20 V. RDS(ON) = 0.017 Ω @ VGS = -4.5 V RDS(ON) = 0.024 Ω @ VGS = -2.5 V Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.
FDR838P Datasheet
