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FDR838P - P-Channel MOSFET

General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • -8 A, -20 V. RDS(ON) = 0.017 Ω @ VGS = -4.5 V RDS(ON) = 0.024 Ω @ VGS = -2.5 V Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDR838P March 1999 FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • • • • • -8 A, -20 V. RDS(ON) = 0.017 Ω @ VGS = -4.5 V RDS(ON) = 0.024 Ω @ VGS = -2.5 V Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.