Datasheet Summary
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January 2005
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
- Q1: N-Channel RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 35mΩ @ VGS = 7V
- Q2: P-Channel RDS(on) = 31mΩ @ VGS =
- 10V RDS(on) = 42mΩ @ VGS =
- 4.5V
- - Fast switching speed...