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FDS6694 - 30V N-Channel Fast Switching PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Key Features

  • 12 A, 30 V. RDS(ON) = 11 mΩ @ V GS = 10 V RDS(ON) = 13.5 mΩ @ V GS = 4.5 V.
  • Low gate charge (13 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Full PDF Text Transcription for FDS6694 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDS6694. For precise diagrams, tables, and layout, please refer to the original PDF.

FDS6694 December 2001 FDS6694 30V N-Channel Fast Switching PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to impro...

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his N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 12 A, 30 V. RDS(ON) = 11 mΩ @ V GS = 10 V RDS(ON) = 13.5 mΩ @ V GS = 4.5 V • Low gate charge (13 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability.