Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
- 6.7 A, 20 V. RDS(ON) = 22 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V.
- Low gate charge (12 nC typical).
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability
D2 D
D2 D
DD1 D1 D
5 6 7
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
G2 S2 S
G1 S1 G
S
8
1
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed
TA=25 C unless othe.
FDS6812A Datasheet
