FDS6815 Datasheet | Fairchild Semiconductor

Description These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced Power Trench TM process. It has been optimized for power management applications which require a wide range of gate drive voltages. Features • • • • • • -5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = –4.5 V RDS(ON) = 0.050 Ω @ VGS = –2.5 V Extended VGSS range ( ±12V) for battery applications. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications • Load switch • Battery protection • Power management D2 D1 D1 S2 G2 D2 5 6 7 8 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD G1 S1 Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ±12 (Note 1a) Units 5.5 50 2.0 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1.0 0.9 -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case...