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FDS6815 - Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrench TM process.

It has been optimized for power management applications which require a wide range of gate drive voltages.

Key Features

  • • • • • • • -5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = –4.5 V RDS(ON) = 0.050 Ω @ VGS = –2.5 V Extended VGSS range ( ±12V) for battery.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6815 July 1999 ADVANCE INFORMATION FDS6815 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrench TM process. It has been optimized for power management applications which require a wide range of gate drive voltages. Features • • • • • • -5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = –4.5 V RDS(ON) = 0.050 Ω @ VGS = –2.5 V Extended VGSS range ( ±12V) for battery applications. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.