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FDS6814 - Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description

These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process.

It has been optimized for power management applications which require a wide range of gate drive voltage.

Key Features

  • • • • • • • 8 A, 20 V. RDS(ON) = 0.020 Ω @ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V Rugged gate rating ( ±12V). Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6814 July 1999 ADVANCE INFORMATION FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide range of gate drive voltage. Features • • • • • • 8 A, 20 V. RDS(ON) = 0.020 Ω @ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V Rugged gate rating ( ±12V). Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.