FDS8928A Datasheet | Fairchild Semiconductor

July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features N-Channel 5.5 A,30 V, RDS(ON)=0.030 Ω @ VGS=4.5 V RDS(ON)=0.038 Ω @...