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FDS8928A Datasheet Dual-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect.

General Description

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • N-Channel 5.5 A,30 V, RDS(ON)=0.030 Ω @ VGS=4.5 V RDS(ON)=0.038 Ω @ VGS=2.5 V. P-Channel -4 A,-20 V, RDS(ON)=0.055 Ω @ VGS=-4.5 V RDS(ON)=0.072 Ω @ VGS=-2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 7 4 3 2 1 S FD 8A 2 89 S2 G2 G1 8 SO-8 pin 1 S1 Absolute Maximum R.

More Datasheets from Fairchild (now onsemi)

Part Number Description
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FDS8936A Dual N-Channel MOSFET
FDS8936S Dual N-Channel MOSFET
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FDS8949 Dual N-Channel MOSFET

FDS8928A Distributor