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FDS8934A - Dual P-Channel MOSFET

Datasheet Summary

Description

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • -4 A , -20 V, RDS(ON) = 0.055 Ω @ VGS = -4.5 V, RDS(ON) = 0.072 Ω @ VGS = -2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 S FD 4A 3 89 G1 S2 G2 5 6 7 8 4 3 2 1 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.

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Datasheet Details

Part number FDS8934A
Manufacturer Fairchild Semiconductor
File Size 417.45 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDS8934A Datasheet
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Full PDF Text Transcription

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May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -4 A , -20 V, RDS(ON) = 0.055 Ω @ VGS = -4.5 V, RDS(ON) = 0.072 Ω @ VGS = -2.5 V. High density cell design for extremely low RDS(ON).
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