Datasheet4U Logo Datasheet4U.com

FDS8936S - Dual N-Channel MOSFET

General Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance.

Key Features

  • Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted FDS8936S 30 ±20.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS8935 Dual P-Channel MOSFET ON Semiconductor
FDS89141 Dual N-Channel 100V MOSFET VBsemi
FDS89161 N-Channel Enhancement MOSFET Kexin
FDS8949 Dual N-Channel MOSFET ON Semiconductor
FDS8949-F085 Dual N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDS8936A Dual N-Channel MOSFET
FDS8934A Dual P-Channel MOSFET
FDS8935 MOSFET
FDS89141 Dual N-Channel MOSFET
FDS89161 Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package.