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FDS8936S - Dual N-Channel MOSFET

Datasheet Summary

Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance.

Features

  • Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted FDS8936S 30 ±20.

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Datasheet Details

Part number FDS8936S
Manufacturer Fairchild Semiconductor
File Size 269.55 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDS8936S Datasheet
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Full PDF Text Transcription

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August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package.
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